Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method |
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Authors: | Murata Junji Shirasawa Yuki Sano Yasuhisa Sadakuni Shun Yagi Keita Okamoto Takeshi Hattori Azusa N Arima Kenta Yamauchi Kazuto |
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Affiliation: | Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan. |
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Abstract: | The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment. |
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