| 全耗尽SOI LDMOS阈值电压的解析模型 |
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| 引用本文： | 吴秀龙,陈军宁,柯导明. 全耗尽SOI LDMOS阈值电压的解析模型[J]. 微电子学与计算机, 2007, 24(11): 17-20 |
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| 作者姓名： | 吴秀龙 陈军宁 柯导明 |
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| 作者单位： | 安徽大学,电子科学与技术学院,安徽,合肥,230039 |
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| 摘 要： | 通过准二维的方法,求出了全耗尽SOILDMOS晶体管沟道耗尽区电势分布的表达式,并建立了相应的阈值电压模型。将计算结果与二维半导体器件模拟软件MEDICI的模拟结果相比较,两者误差较小,证明了本模型的正确性。从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系,并且发现ΔVth与背栅压的大小无关。
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| 关 键 词： | 阈值电压 准二维方法 |
| 文章编号： | 1000-7180（2007）11-0017-04 |
| 修稿时间： | 2006-10-12 |
An Analytical Model of Threshold Voltage for Fully-Depleted SOI LDMOS |
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| WU Xiu-long,CHEN Jun-ning,KE Dao-ming. An Analytical Model of Threshold Voltage for Fully-Depleted SOI LDMOS[J]. Microelectronics & Computer, 2007, 24(11): 17-20 |
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| Authors: | WU Xiu-long CHEN Jun-ning KE Dao-ming |
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| Affiliation: | Institute of Electronic Science and Technology, Anhui University, Hefei 230039, China |
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| Abstract: | The potential distribution for the channel depletion layer of fully-depleted SOI LDMOS was obtained by using quasi-two-dimensional method, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias. |
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| Keywords: | SOI LDMOS |
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