Selective carrier removal using oxygen implantation in GaAs |
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| Authors: | Berth M. Venger C. Martin G.M. |
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| Affiliation: | Laboratoires d'Electronique et de Physique Appliquée, Limeil-Brévannes, France; |
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| Abstract: | It has been reported that free-carrier compensation can be achieved using oxygen implantation and can remain stable even after annealing at temperatures up to 900°C. It is demonstrated that carrier removal rate is drastically dependent on the initial donor species. It is very likely that carrier removal in Si-doped layers takes place via formation of Si-O complexes. |
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