近距离升华制备CdTe掺Te薄膜的结构与电性能研究

采用近距离升华(Close-Spaced-Sublimation,CSS)技术制备CdTe及掺Te薄膜.并利用XRF、XRD、SEM及Hall系统研究了其含量、结构、表面形貌和电性能.结果表明,CSS技术制备的CdTe薄膜晶形好,晶粒度较RF方法制备的薄膜增大约100倍.Te掺入CdTe薄膜后,改变了CdTe膜的结晶特性,适当掺入Te可以促进CdTe晶格的生长,并导致Cdrre膜晶格常数变大.薄膜面电阻率降低,面载流子浓度增大,以及载流子迁移率的增大,表明掺杂Te后CdTe膜的电导性能大大改善.

Structure and Electrical Properties of Te-Doped CdTe Thin Films Prepared by Close-Spaced-Sublimation Technique

CdTe and Te-doped CdTe thin films were prepared by close-spaced-sublimation(CSS) technique. The composition, structure, surface and electrical properties of the films were studied by using XRF.XRD, SEM and HALL. The results show that the films deposited by CSS have good crystallization. Crystalline grain is 100 times bigger than that of the films deposited by RF method. Te doping changes the crystal characteristic of CdTe films. The proper Te doping can improve lattice growing of CdTe films, and cause lattice constant increasing. The films' resistivity decreases while mobility and carrier concentration increase, which indicates electrical conductivity of Te doped CdTe increases greatly.