Very low threshold current density 1.29 μm GaInNAs triple quantum well lasers grown by MBE |
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| Authors: | Zhao H. Adolfsson G. Wang S.M. Sadeghi M. Larsson A. |
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| Affiliation: | Chalmers Univ. of Technol., Goteborg; |
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| Abstract: | Very low threshold Ga0.62In0.38N0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29 mum are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As- cleaved broad area lasers with a cavity length of 1 mm showed a record low threshold current density of 400 A/cm2 (~130 A/cm2 / QW), a high differential efficiency of 0.32 W/A/facet and a characteristic temperature of 94 K in the temperature range 10 to 110degC. |
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