Enhanced quantum efficiency of Pd2Si Schottky infrared diodes on 〈111〉 Si

A two-fold improvement in the infrared emission efficiency has been obtained on Pd2Si/p-Si Schottky diodes through a proper choice of the Si substrate orientation. Photoresponse measurements on thin Pd2Si/p-Si infrared Schottky detectors (lambda_{c} = 3.5µ) yielded Fowler C1 coefficients of 66 percent/eV for Si and 32 percent/eV for Si. Leakage current versus temperature measurements at 6-V reverse bias of these Pd2Si/p-Si diodes with guard ring structures agreed with thermionic-emission leakage-current theory using the photoresponse obtained barrier value of 0.35 eV. These results have impact on SWIR detection applications such as earth resources satellite mapping.