硅微波晶体管亚微米全干法腐蚀技术

随着器件尺寸朝亚微米规模、超大规模方向发展,常规的湿法腐蚀技术已无法满足要求。这里的器件制作全部采用正性光致抗蚀剂、接触式曝光和反应离子刻蚀制作方法。容易重复获得约0.6μm的发射区条宽,4μm周期的发射极排列密度,条宽和条距均为1μm的梳状金属电极图形,而且该金属具有足够的W、Au厚度,保证器件在C、X波段有良好的高频特性及抗电冲击能力。

Submicron Silicon Microwave Transistor Technology with Fully Dry-Etching Process

As the dimension and scale of semiconductor are stepping forward to submicron and very large scale, the ordinary wet chemical etch is unable to meet the requirement. This paper describes the device fabricated by employing positive photor sist, contact exposure and reactive ion etch. This method was easy to obtain repeatedly the interdigital metal pattern with the emitter strip of about 0.6μm, emitter cycle of 4μm, and the metal strip Width and strip space of 1μm, respectively. The metal pattern had enough W, Au thickness, which ensured device for good high frequency characteristics in C, X bands and ruggedness.