A semi-empirical model for the field-effect mobility ofhydrogenated polycrystalline-silicon MOSFETs |
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Authors: | Seki S Kogure O Tsujiyama B |
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Affiliation: | Opto-Electron. Labs., NTT Corp., Kanagawa; |
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Abstract: | The quantitative relationship between field-effect mobility (μ FE) and grain-boundary trap-state density (Nt ) in hydrogenated polycrystalline-silicon (poly-Si) MOSFETs is investigated. The focus is on the field-effect mobility in MOSFETs with Nt 1×102 cm-2. It is found that reducing Nt to as low as 5×1011 cm-2 has a great impact on μFE. MOSFETs with the Nt of 4.2×1011 cm-2 show an electron mobility of 185 cm2/V-s, despite a mean grain size of 0.5 μm. The three principal factors that determine μFE, namely, the low-field mobility, the mobility degradation factor, and the trap-state density Nt are clarified |
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