| 栅控Tc的高温氧化物超导体场效应晶体管 |
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| 引用本文： | 蒋建飞,汤玉生.栅控Tc的高温氧化物超导体场效应晶体管[J].电子学报,1995,23(8):15-19. |
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| 作者姓名： | 蒋建飞 汤玉生 |
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| 作者单位： | 上海交通大学微电子学研究所 |
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| 摘 要： | 本文提出了栅控超导临界温度Ｔｃ的高温氧化物超导体场效应晶体管的原理，建立了场控Ｔｃ的方程，估算和分析了器件特性，对发展和研究ＨＴＯＳｓ－ＭＯＳｓＦＥＴ的器件和电路有积极的指导意义。
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| 关 键 词： | 高温 氧化物超导体 栅控 场效应 晶体管 |
High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c |
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| Jiang Jianfei,Tang Yusheng,Cai Qiyu.High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c[J].Acta Electronica Sinica,1995,23(8):15-19. |
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| Authors: | Jiang Jianfei Tang Yusheng Cai Qiyu |
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| Abstract: | This paper presents the principle of High Temperature Oxide Superconductors FieldEffect Transistor(HTOSs-MOSuFET) using gate controlled critical temperature Tc.Tc equation isestablished by gate voltage control,device characteristics are estimated and analyzed.It is very important for the development and investigation of the device and circuits of HTOSs-MOSuFET. |
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| Keywords: | High temperature oxide superconductors Gate controlled Field effect |
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