Gaq3有机薄膜电致发光器件

首次报道了采用８－羟基喹啉镓螯合物作为发光层制备有机薄膜电致发光器件，器件的结构为：ＩＴＯ导电玻璃／ＴＰＤ／Ｇａｑ３／Ａｌ。研究了Ｇａｑ３薄膜的光致发光和器件的电致发光机理，同时测量和研究了器件的电流密度－－电压（Ｊ－Ｖ）特性和发光亮度－电压（Ｂ－Ｖ）特性。结果表明器件的电致发光峰值波长为５４０ｎｍ，在２０Ｖ直流电压驱动下的最大发光亮度约２５００ｃｄ／ｍ＾２明显高于上同结构和工艺参数制备的Ａｌｑ３

Organic thin film electroluminescent devices using Gaq3 as emitting layers

Organic thin film EL devices with double layered ITO coated glass/TPD/Gaq3/Al structure are fabricated.Mechanisms of PL for Gaq3 thin film and EL for the devices are studied. Characteristics of current density-voltage ( J-V ) and luminescent brightness-voltage ( B-V ) are also measured and investigated. It is shown that EL devices using Gaq3 as emitting layers emit light at a peak wavelength of 540 nm. The maximum luminescent brightness of the devices is about 2 500 cd/m 2 at 20 V, which is higher than that of devices using Alq3 and Znq2 as emitting layers prepared with the same structures and under the same conditions as that of Gaq3. Based on quantum efficiency,analyzation is made on why the brightness of the Gaq3 device is better than that of other two kinds of devices.