| 射频功率对a-C:F薄膜沉积速率和结构的影响 |
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| 引用本文： | 刘雄飞,高金定,周昕,肖剑荣,张云芳. 射频功率对a-C:F薄膜沉积速率和结构的影响[J]. 电子元件与材料, 2004, 23(10): 14-16 |
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| 作者姓名： | 刘雄飞 高金定 周昕 肖剑荣 张云芳 |
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| 作者单位： | 中南大学物理科学与技术学院,湖南,长沙,410083;中南大学物理科学与技术学院,湖南,长沙,410083;中南大学物理科学与技术学院,湖南,长沙,410083;中南大学物理科学与技术学院,湖南,长沙,410083;中南大学物理科学与技术学院,湖南,长沙,410083 |
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| 摘 要： | 用射频等离子体增强型化学气相沉积法制备了a-C:F薄膜,并研究了射频功率对a-C:F薄膜沉积速率和结构的影响。用椭偏仪测量了薄膜的厚度,并用红外谱(FITR)结合Raman谱研究了其结构的变化。结果表明:薄膜沉积速率在10~14 nm/min之间,主要含有CFx和C=C键。随射频功率的升高,沉积速率先增大后减小,CF3的含量迅速减小,CF和CF2的含量略有增加,薄膜中r(F/C)呈下降的趋势。在较高功率下沉积的薄膜中出现了由sp2和sp3混合微晶结构。
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| 关 键 词： | 电子技术 射频功率 a-C:F薄膜 沉积速率 结构 |
| 文章编号： | 1001-2028(2004)10-0014-03 |
Effect of RF Power on Depositional Rate and Microstructure of a-C:F Thin Film |
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| LIU Xiong-fei,GAO Jin-ding,ZHOU Xin,XIAO Jian-rong,ZHANG Yun-fang. Effect of RF Power on Depositional Rate and Microstructure of a-C:F Thin Film[J]. Electronic Components & Materials, 2004, 23(10): 14-16 |
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| Authors: | LIU Xiong-fei GAO Jin-ding ZHOU Xin XIAO Jian-rong ZHANG Yun-fang |
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| Abstract: | Prepared were the a-C:F thin films by RF-PECVD. Effects of RF power on depositional rate and microstructure of a-C:F thin films were investigated. The thickness of the film was measured by ellipsomter and its microstructure was observed by spectra of FITR and Raman. The results obtained show the films contain mainly CFx and C=C bonds when depositional rate of the film is in the range of (10~14) nm/min. With the increase of RF power, depositional rate first increases and then decreases. The contents of CF3 radical rapidly decrease while the CF and CF2 radical contents increase slightly. The mole ratio of F/C also drop. The thin film which is deposited at higher RF power, contains sp2 and sp3 mixed microcrystals. |
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| Keywords: | electronic technology RF power a-C:F thin film depositional rate microstructure |
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