The implementation methodology of the real effects in a NOI nanostructure,aided by simulation and modelling |
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| Authors: | Cristian Ravariu |
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| Affiliation: | 1. College of IoT Engineering, Hohai University, Changzhou 213022, China;2. iRoC Technologies, Grenoble 38000, France;3. China Institute of Atomic Energy, Beijing 102413, China;4. Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China;5. College of Overseas Education, Nanjing Tech University, Nanjing 211167, China;6. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.;7. College of Engineering, University of Saskatchewan, Saskatoon S7N 5A9, Canada;8. Hanyang University, Ansan 15588, South Korea;1. National Institute for Research and Development in Microtechnologies, Laboratory of Nanobiotechnology, 126A, Erou Iancu Nicolae Street, 077190, Romania;2. National Institute of Materials Physics, Atomistilor Str. 105bis, PO Box MG 7, Magurele, Bucharest 077125, Romania;3. Inasmet Fdn, Dept. Biomat & Nanotechnol, San Sebastian, Spain |
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| Abstract: | The SOI transistors permanently offer new candidates as nanodevices. The nothing on insulator NOI transistor was recently derived from the nano SOI–MOSFET family. Their output characteristics were theoretical modelled with an exponential law, validated by simulations. The transfer characteristics presented sometimes increasing and others times decreasing monotony. This phenomenon was put directly into a relationship with the gate tunnelling breakdown. This paper has three final targets: the breakdown limitation through the back-gate terminal, the real effects including in the NOI transistor architecture – like interface charges or metal-semiconductor work function and quantum effects corrections in simulations, in order to produce a better correlation between simulations and a real behaviour. These simulations represent a milestone in the NOI nanotransistor manufacturing, establishing some parameters that link the device to the real work regime. |
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