| 基于化学机械动力学的碱性铜抛光液平坦化机理研究 |
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| 引用本文： | 王胜利,尹康达,李湘,岳红维,刘云岭.基于化学机械动力学的碱性铜抛光液平坦化机理研究[J].半导体学报,2013,34(8):086003-4. |
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| 作者姓名： | 王胜利 尹康达 李湘 岳红维 刘云岭 |
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| 作者单位： | Institute of Microelectronics,Hebei University of Technology;No.46 Research Institute of China Electronics Technology Group Corporation |
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| 基金项目： | 国家中长期科技发展计划02重大专项(NO. 2009ZX02308) |
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| 摘 要： | The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing (CMP) process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole(BTA),by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.
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| 关 键 词： | chemical mechanical kinetics alkaline copper slurry planarization mechanism complexation reaction barrier |
Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics |
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| Wang Shengli,Yin Kangd,Li Xiang,Yue Hongwei and Liu Yunling.Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics[J].Chinese Journal of Semiconductors,2013,34(8):086003-4. |
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| Authors: | Wang Shengli Yin Kangd Li Xiang Yue Hongwei and Liu Yunling |
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| Affiliation: | 1. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
2. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;No.46 Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, China |
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| Abstract: | The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing (CMP) process from the perspective of chemical mechanical kinetics. Different from the international dominant acidic copper slurry, the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions, the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole (BTA), by which the problems caused by BTA can be avoided. Through the experiments and theories research, the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory, the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions, the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier. The kinetic energy at the concave position should be lower than the complexation reaction barrier, which is the key to achieve planarization. |
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| Keywords: | chemical mechanical kinetics alkaline copper slurry planarization mechanism complexation reaction barrier |
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