| AlGaN/GaN异质结材料基于热氧化的湿法腐蚀方法 |
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| 引用本文： | 蔡金宝,王金延,刘洋,徐哲,王茂俊,于民,解冰,吴文刚. AlGaN/GaN异质结材料基于热氧化的湿法腐蚀方法[J]. 半导体学报, 2013, 34(8): 086004-4 |
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| 作者姓名： | 蔡金宝 王金延 刘洋 徐哲 王茂俊 于民 解冰 吴文刚 |
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| 作者单位： | Wide Bandgap Semiconductor Laboratory,Institute of Microelectronics,Peking University |
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| 基金项目： | 中国自然科学基金(Nos. 60406004, 60890193, 60736033) |
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| 摘 要： | A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700℃could be etched off in a homothermal（70℃） KOH solution while the KOH solution had no etching effects on the region of the AlGaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900℃followed by 30 min treatment in 70℃KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.
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| 关 键 词： | AlGaN/GaN wet etching thermal oxidation KOH solution |
| 收稿时间： | 2013-01-08 |
A novel oxidation-based wet etching method for AlGaN/GaN heterostructures |
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| Cai Jinbao,Wang Jinyan,Liu Yang,Xu Zhe,Wang Maojun,Yu Min,Xie Bin and Wu Wengang. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures[J]. Chinese Journal of Semiconductors, 2013, 34(8): 086004-4 |
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| Authors: | Cai Jinbao Wang Jinyan Liu Yang Xu Zhe Wang Maojun Yu Min Xie Bin Wu Wengang |
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| Affiliation: | Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China;Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | |
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| Keywords: | AlGaN/GaN wet etching thermal oxidation KOH solution |
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