220 GHz新型SIW-波导过渡结构的设计

基片集成波导(SIW)既有波导的损耗低、品质因数高、功率容量大的特点，又兼具微带线的低剖面、尺寸小、易于与其他平面电路集成的优点，被广泛应用于微波电路设计之中。鉴于目前测试系统及级联都采用矩形波导端口，为实现对SIW元器件的测试及系统集成，须对SIW元器件进行过渡结构设计。采用三维高频电磁仿真软件仿真和优化，设计了一种新型SIW-波导过渡结构。仿真结果表明：该结构在205~225 GHz频段内，带内插入损耗在0.5~0.6 dB之间，回波损耗大于12 dB；背对背结构，插入损耗小于1.5 dB，回波损耗大于10 dB，相对带宽11.4%。

Design of new type Substrate Integrated Waveguide-to-microstrip transition structure in 220 GHz

Substrate Integrated Waveguide(SIW) has been widely used in microwave circuits because it bears the advantages of both waveguide and microstrip, such as low cost, high Q, compact size, and easy for fabrication, etc. In order to measure the scattering parameters of planar SIW components and realize system integration, it is necessary to develop the transition between SIW and rectangular metallic waveguide because most of the measurement systems are waveguide based. The transition between SIW and waveguide is designed and optimized by using High Frequency Structure Simulator(HFSS). The simulation results indicate that: in 205-220 GHz, the in-band insertion loss is between 0.5-0.6 dB, and the return loss is more than 12 dB; the back to back structure has less than 1.5 dB insertion loss and the return loss is more than 10 dB, the relative bandwidth is 11.4%.