Band-to-band tunnelling current in Ga0.47 In0.53 As p-n junctions |
| |
| Authors: | Pearsall T.P. |
| |
| Affiliation: | Thomson-CSF, LCR, Orsay, France; |
| |
| Abstract: | The tunnelling current in Ga0.47In0.53As p-n junctions from Zener tunnelling is calculated from the Kane model with no adjustable parameters. This calculation indicates that band-to-band tunnelling becomes an important contribution to the reverse current near breakdown (JR = 10?1 Acm?2) in abrupt p-n junctions for |ND?NA|>6 × 1015 cm?3. Experimental measurements show, however, that band-to-band tunnelling becomes the dominant contribution to the dark current near breakdown for |ND?NA|>4 × 1016 cm?3. |
| |
| Keywords: | |
|
|
