Study of CuInSe2 thin films prepared by electrodeposition |
| |
Authors: | S N Qiu L Li C X Qiu I Shih C H Champness |
| |
Abstract: | Thin films of p-type CuInSe2 prepared by a one-step electrodeposition method have been studied by constructing CdS/CuInSe2 junctions. After the electrodeposition, the CuInSe2 films were treated either in vacuum or in Ar. Cells of the form CdS (high σ)/CdS (low σ)/CuInSe2 were then fabricated for studying the electrodeposited films. Measurements were specifically carried out to determine the diffusion length of minority carriers in the p-type CuInSe2. It was found that the minority carrier diffusion length in CuInSe2 films treated in Ar was generally greater than that for films treated in vacuum under similar conditions. A small area cell (active area 0.11 cm2) with a conversion efficiency of about 7% (under 125 mW/cm2 illumination) has been fabricated. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |