Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 /spl mu/m CMOSFET with 2-nm thin gate oxide |
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Authors: | Wen-Kuan Yeh Wen-Han Wang Yean-Kuen Fang Mao-Chieh Chen Fu-Liang Yang |
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Affiliation: | Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan; |
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Abstract: | Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 /spl mu/m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1 /spl mu/m FB-SOI pMOSFET is similar to that of the 0.1 /spl mu/m BC-SOI pMOSFET. |
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