| InP DHBT技术的最新进展 |
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| 引用本文： | 赵小宁.InP DHBT技术的最新进展[J].微纳电子技术,2009,46(7). |
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| 作者姓名： | 赵小宁 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 阐述了目前InP DHBT器件技术的研究进展,介绍了I型InP/InGaAs DHBT技术的研究水平和Ⅱ型InP/GaAsSb DHBT技术的开发现状。综述了InP DHBT在功率放大器、分布放大器、静态分频器和压控振荡器领域的应用,指出了其在高速数据传输系统中的重要性。为了适应高速数据传输系统的飞速发展,满足10/40/100Gbit/s高速系统的技术需求,对我国研发InPDHBT技术提出初步建议。
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| 关 键 词： | 磷化铟 双异质结双极型晶体管 磷化铟/镓砷锑 放大器 高速数据传输系统 |
Recent Technical Progress of InP DHBTs |
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| Zhao Xiaoning.Recent Technical Progress of InP DHBTs[J].Micronanoelectronic Technology,2009,46(7). |
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| Authors: | Zhao Xiaoning |
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| Affiliation: | The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | The research progress of InP double heterojunction bipolar transistors(DHBTs) technology is expatiated.The research level of Ⅰ-type InP/InGaAs DHBTs is reviewed,and the research status of Ⅱ-type InP/GaAsSb DHBTs is introduced.The applications of InP DHBTs in power amplifiers,distributed amplifiers,static dividers and voltage controlled oscillators are summarized with focus on the importance of InP DHBTs in high-speed data transmission systems.The suggest on the development of InP DHBTs technplogy is put forward to adapt to the rapid development of high-speed data transmission systems and meet the technical requirement of 10/40/100 Gbit/s high speed systems. |
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| Keywords: | InP double heterojunction bipolar transistor(DHBT) InP/GaAsSb amplifier high speed data transmission system |
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