Ⅲ-Ⅴ族半导体材料外延及其物理化学 |
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引用本文: | 彭瑞伍,莫金玑.Ⅲ-Ⅴ族半导体材料外延及其物理化学[J].固体电子学研究与进展,1982(2). |
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作者姓名: | 彭瑞伍 莫金玑 |
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作者单位: | 中国科学院上海冶金研究所
(彭瑞伍),中国科学院上海冶金研究所(莫金玑) |
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摘 要: | <正>——本文概述了近年来Ⅲ-Ⅴ族半导体材料的外延,特别是有关电外延,金属有机化合物和分子束外延的国内外发展动态及其应用;同时也简要地介绍了Ⅲ-Ⅴ族化合物外延的物理化学.
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The Epitaxy of Ⅲ-V Compounds and Its Physical Chemistry |
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Abstract: | In this paper, a review of recent work on epitaxy of Ⅲ-V compounds, particularly the electroepitaxy, metallorganic vapor phase epitaxy and molecular beam epitaxy, is presented together with their main applications.
The physical chemistry of the epitaxy of Ⅲ-V compounds is also briefly described, |
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