| 功率MOS器件SEB、SEGR测量系统的研制 |
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| 引用本文： | 王燕萍,唐本奇,耿斌,杜凯.功率MOS器件SEB、SEGR测量系统的研制[J].核电子学与探测技术,2001,21(3):217-219. |
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| 作者姓名： | 王燕萍 唐本奇 耿斌 杜凯 |
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| 作者单位： | 1. 西北核技术研究所,西安69信箱16分箱,
2. 西安电力电子技术研究所, |
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| 摘 要： | 研制了功率MOS器件单粒子烧毁、单粒子栅穿辐照效应实验用的电流测量及电源系统，该系统由栅极电源电路、极电源电路、漏极RC振荡电路和DUT栅极触发电路组成，具有栅（漏）极电压偏置、电流测量、过流保护、电容电阻选择等功能，经实验验证，本系统工作性能稳定可靠。
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| 关 键 词： | 功率MOS器件 辐照效应 电压偏置 电流测量 电源系统 单粒子烧毁 单粒子栅穿 |
| 文章编号： | 0258-0934(2001)03-0217-03 |
| 修稿时间： | 2000年2月10日 |
The study and fabrication of the SEB,SEGR measure system for the power MOS transistor |
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| WANG Yan-ping,TANG Ben-qi,GENG Bin,DU Kai.The study and fabrication of the SEB,SEGR measure system for the power MOS transistor[J].Nuclear Electronics & Detection Technology,2001,21(3):217-219. |
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| Authors: | WANG Yan-ping TANG Ben-qi GENG Bin DU Kai |
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| Abstract: | The system used in the experiment of single event burnout and single event gate rupture of power MOS transistors radiation effects has been developed. The system consists of a gate voltage supply circuit, a drain voltage supply circuit, a drain RC oscillatory circuit and a DUT gate trigger circuit.It has the capabilities of measuring the gate (or drain )voltage and current,over current protection and the selection of capacity and resistor. It has been proved by experiments that the system is reliable functional. |
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| Keywords: | power MOS transitor radiation effects voltage bias current measure |
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