The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl<sub>4</sub> – containing atmosphere期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl₄ – containing atmosphere

Authors:	Jian Sui Jinjun Lu

Affiliation:	^aState Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China;^bGraduate School of the Chinese Academy of Sciences, Beijing 100039, China

Abstract:	The synthesis of a dual-layer carbon film on SiC is reported using a combination of carbide-derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl₄ – containing atmosphere. The film is composed of a CDC sub-layer formed by chlorination of the SiC and a CVD top-layer by pyrolyzing CCl₄. Scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and thermogravimetric analysis are employed to analyze the film. The formation mechanism of the dual-layer film is proposed as two simultaneous and competitive processes, namely, the chlorination of SiC and the growth of CVD layer.

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