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High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts
Authors:Jaehyun Park  Jangyeol Yoon  Seong Jun Kang  Gyu-Tae Kim  Jeong Sook Ha
Affiliation:aDepartment of Chemical and Biological Engineering, Korea University, 1 Anam-dong Seongbuk-gu, Seoul 136-701, Republic of Korea;bDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea;cSchool of Electrical Engineering, Korea University, 1 Anam-dong Seongbuk-gu, Seoul 136-701, Republic of Korea
Abstract:We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 1/2000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (Ion/Ioff > 104) and a high photosensitivity to the exposure of UV/visible light.
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