High-power microwave 0.25-μm gate doped-channel GaN/AlGaNheterostructure field effect transistor |
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Authors: | Chen Q Yang JW Gaska R Khan MA Shur MS Sullivan GJ Sailor AL Higgings JA Ping AT Adesida I |
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Affiliation: | APA Opt. Inc., Blaine, MN; |
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Abstract: | We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFETs). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors |
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