Effects of rapid thermal treatments on Ti/TiN/Si structures for electrical contacts on silicon

Abstract

A possible new technique for metallisations in Si microelectronics technology has been prepared and characterised. Bilayers of TiN_x/Ti were deposited by sputtering over a Si substrate. The samples were annealed in a rapid thermal processing system, and further analysed using Auger electron spectroscopy and electrical measurements (Schottky barrier height and sheet resistance). Significant differences from the more usual silicidiltion process of a Ti/Si structure have been observed. The silicidation process of the TiN_x/Ti structures is mainly controlled by the presence of the intermediate TiN layer. The final structure was determined to be Si/TiSi_x/TiN_y/TiSi_z.

MST/3336