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Correlation between high pressure effect and alloying in GaAs and Ga1-xAlx As |
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| Authors: | M Ferhat H Aourag B Khelifa |
| Affiliation: | Laboratoire des Sciences des Matériaux, Institut des Sciences Exactes, Université de Sidi-Bel-Abbes, 22000, Algeria |
| Abstract: | The empirical pseudopotential method coupled with the virtual crystal approximation has been used to compute the electronic band gaps and pseudocharge densities for the compound semiconductor GaAs and the alloy Ga1?xAlxAs. The variation of the compositional fraction of AlAs in GaAs has been correlated to the high pressure effect on GaAs. |
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