Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors |
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| Authors: | Tanaka S Hayama H Furukawa A Baba T Mizuta M Honjo K |
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| Affiliation: | NEC Corp., Kawasaki, Japan; |
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| Abstract: | The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.<> |
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