| (Sr,Pb)TiO_3系V形PTCR陶瓷材料的研制 |
| |
| 引用本文： | 詹益增,吴世俊. (Sr,Pb)TiO_3系V形PTCR陶瓷材料的研制[J]. 电子元件与材料, 1999, 0(2): 21-23 |
| |
| 作者姓名： | 詹益增 吴世俊 |
| |
| 作者单位： | 华南理工大学材料科学与工程学院,广州,510641 |
| |
| 摘 要： | 研究了原材料、液相添加剂ＢＮ对Ｙ３＋掺杂的（Ｓｒ０．４Ｐｂ０．６）ＴｉＯ３Ｖ形ＰＴＣＲ陶瓷半导化和显微结构的影响。结果表明，添加剂ＢＮ能促进晶粒生长、改善显微结构、显著降低室温电阻率ρ２５和烧结温度。用常规的制备方法制得居里温度ＴＣ≈２１０℃、ρ２５≤５．０×１０３Ω·ｃｍ、电阻温度系数α４０≈１３％℃－１、电阻率ρ突变比ρｍａｘ／ρｍｉｎ＞５．０×１０３的Ｖ形ＰＴＣＲ陶瓷材料。
|
| 关 键 词： | 钛酸锶铅 V形PTCR陶瓷 添加剂 氮化硼 |
Development of V-PTCR (Sr, Pb)TiO3 ceramics |
| |
| Zhan yizeng,Wu Shijun. Development of V-PTCR (Sr, Pb)TiO3 ceramics[J]. Electronic Components & Materials, 1999, 0(2): 21-23 |
| |
| Authors: | Zhan yizeng Wu Shijun |
| |
| Abstract: | The effect of raw materials and liquid phase additives BN on the semiconducting state and the microstructure of V type PTCR (Sr 0 4 Pb 0 6 )TiO 3 ceramics doped with Y 3+ is studied The results show that additives BN can promote the growth of grain, improve the microstructure, obviously reduce the room temperature resistivity and the sintering temperature of ceramics by conventional preparation processes, the V type PTCR ceramics is made with Curie temperature T C≈210℃, room temperature resistivity ρ 25 ≤5 0×10 3Ω·cm, temperature coefficient of resistivity α 40 ≈13%/℃, resistivity jump ρ max / ρ min >5 0×10 3 (8 refs ) |
| |
| Keywords: | strontium lead titanate V type PTCR ceramics additives |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
