|
|||||
|
|
A Silicon Plasma-Based Wideband Modulator |
|
| Authors: | S. V. Koshevaya M. Tecpoyotl-T E. A. Gutiérrez-D M. Hayakawa V. V. Grimalsky |
| Affiliation: | 1. National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Z. P. 72000, Puebla, Mexico 2. CIICAp, Autonomous University of Morelos, Av. Universidad, No. 10001, Z. P. 62210, Morelos, Mexico 3. Department of Electronics Engineering, University of Electro-Communications, Chofu, Tokyo 182, Japan 4. Department of Radiophysics, National University of Kiev, Vladimirskaya St. 60, 252601, Kiev, Ukraine |
| Abstract: | Theoretical and experimental analysis has been performed for surface oriented silicon plasma-based p,i,n structures used to control high power level, broadband devices. It is shown that these structures are very promising for their use as modulators in the millimeter and submillimeter wave range. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |