A thin-film solar cell of high-quality -FeSi2/Si heterojunction prepared by sputtering |
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| Authors: | Zhengxin Liu Shinan Wang Naotaka Otogawa Yasuhito Suzuki Masato Osamura Yasuhiro Fukuzawa Teruhisa Ootsuka Yasuhiko Nakayama Hisao Tanoue Yunosuke Makita |
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| Affiliation: | aTechnology Development Department, System Engineers’ Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;bKankyo Semiconductors Co., Ltd., AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;cNational Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezon, Tsukuba, Ibaraki 305-8568, Japan |
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| Abstract: | High-quality (1 1 0)/(1 0 1)-oriented epitaxial β-FeSi2 films were fabricated on Si (1 1 1) substrate by the sputtering method. The critical feature was the formation of a high-quality thin β-FeSi2 template buffer layer on Si (1 1 1) substrate at low temperature. It was demonstrated that the template is very important for the epitaxial growth of thick β-FeSi2 films and for the blocking of Fe diffusion into the Si at the β-FeSi2/Si interface. Hall effect measurements for β-FeSi2 films showed n-type conductivity, with residual electron concentration around 2.0 × 1017 cm−3 and mobility of 50–400 cm2/V s. A prototype thin-film solar cell was fabricated by depositing n-β-FeSi2 on p-Si (1 1 1). Under 100 mW/cm2 sunlight, an energy conversion efficiency of 3.7%, with an open-circuit voltage of 0.45 V, a short-circuit current density of 14.8 mA/cm2 and a fill factor of 0.55, was obtained. |
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| Keywords: | Iron silicide Template Sputtering Heterojunction Solar cell |
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