银基体上铜等离子体基离子注入层的成分分布

研究了银基体上铜等离子体基离子注入 (CuPBII)层成分深度分布与试验工艺参数的关系。选择影响注入离子能量的脉冲偏压和注入剂量的不平衡磁控靶放电电流和靶基距作为试验参数 ,用X射线光电子谱 (XPS)进行注入层成分深度分析。结果表明 ,对较高的脉冲偏压 (80kV)、中等的磁控靶电流 (75mA)和近的靶基距 (2 0 0mm) ,容易形成厚的银铜过渡层 (7.6μm) ,且铜离子注入、铜原子的反冲注入与铜的沉积很好地匹配。与气体等离子体基离子注入不同 ,铜的沉积速率成为影响银铜过渡层的又一决定因素。

Copper profiles in implantation layers prepared by Cu-plasma based ion implantation into silver substrate

Effects of process parameters on the copper profiles in implantation layers prepared by copper plasma based ion implantation(Cu PBII) into silver substrate have been investigated. The pulse bias( V p), which determines the energy of implantation ion, and the discharge current ( I t)of UBM cathode and the distances( D s t ) between the target and the sample, which determine the dose of implantation ion, were selected as the main factors of experimental process. The profiles of implantation layers were acquired by X ray photoelectron spectroscopy(XPS). It is shown that the thickest transition layers would be formed easily with high V p(80 kV), moderate I t(75 mA) and short D s t (200 mm), and the implantation of copper ions, recoil implantation of copper atoms and deposition of copper match well. Different from the gas plasma based ion implantation, copper deposition becomes another important factor which influences the composition of the transition layer between copper coating and silver substrate.