Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces |
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| Authors: | Toshio Kochiya Yutaka Oyama Ken Suto Jun-ichi Nishizawa |
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| Affiliation: | a Department of Materials Science, Graduate School of Engineering, Tohoku University, Aramaki Aoba 02, Sendai 980-8579, Japan;b Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan |
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| Abstract: | The epitaxial lateral overgrowth (ELO) was performed on {0 0 1}, {1 1 1}A,B and {1 1 0} oriented InP by liquid-phase epitaxy at constant growth temperature (450–650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {1 1 0}>{1 1 1}A,B>{1 0 0} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer. |
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| Keywords: | Author Keywords: Epitaxial lateral overgrowth Liquid-phase epitaxy InP Etch pit distribution PL mapping |
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