| 低压应用的高性能甚高频功率VDMOSFETs |
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| 引用本文： | 刘英坤,梁春广,邓建国,张颖秋,郎秀兰,李思渊. 低压应用的高性能甚高频功率VDMOSFETs[J]. 半导体学报, 2001, 22(8): 975-978 |
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| 作者姓名： | 刘英坤 梁春广 邓建国 张颖秋 郎秀兰 李思渊 |
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| 作者单位： | [1]兰州大学物理系，兰州730000 [2]河北半导体研究所，石家庄050051 |
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| 摘 要： | 采用梯形栅结构和难熔金属钼栅工艺 ,研制出了高性能 ,低电压工作 ,适用于移动通信的甚高频功率VDMOS场效应晶体管 .该器件在 175 MHz、 12 V低电压工作条件下 ,输出功率为 12 W,漏极效率为 70 % ,功率增益为 12 d B
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| 关 键 词： | 低压 梯形栅结构 钼栅工艺 甚高频功率VDMOSFET |
| 文章编号： | 0253-4177（2001）08-0975-04 |
| 修稿时间： | 2001-01-05 |
High Performance VHF Power VDMOSFETs for Low Voltage Applications |
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| LIU Ying-kun ,,LIANG Chun-guang ,DENG Jian-guo ,ZHANG Ying-qiu ,LANG Xiu-lan and LI Si-yuan. High Performance VHF Power VDMOSFETs for Low Voltage Applications[J]. Chinese Journal of Semiconductors, 2001, 22(8): 975-978 |
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| Authors: | LIU Ying-kun LIANG Chun-guang DENG Jian-guo ZHANG Ying-qiu LANG Xiu-lan LI Si-yuan |
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| Affiliation: | LIU Ying-kun 1,2,LIANG Chun-guang 2,DENG Jian-guo 2,ZHANG Ying-qiu 2,LANG Xiu-lan 2 and LI Si-yuan 1 |
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| Abstract: | A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology. |
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| Keywords: | low voltage terraced gate structure Mo gate te chnology VHF power VDMOSFET |
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