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| 氧等离子体处理条件对聚硅烷制备SiO2/Si结构平带电压的影响 | |
| 引用本文： | 向少华,谢茂浓,张明高,廖伟,彭志坚,傅鹤鉴.氧等离子体处理条件对聚硅烷制备SiO2/Si结构平带电压的影响[J].半导体技术,2001,26(1):57-59. |
| 作者姓名： | 向少华 谢茂浓 张明高 廖伟 彭志坚 傅鹤鉴 |
| 作者单位： | 1. 怀化师专物理系, 2. 四川大学物理系, 3. 四川大学化学系, |
| 基金项目： | 国家自然科学基金;29771024; |
| 摘 要： | 氧等离子体处理高阻P型（100）硅片上的聚硅烷涂层制备SiO2/Si结论。其MOS结构平带电压随氧等离子体处理时间、反应室气压、射频功率等条件的改变而变化，平带电压最小可达-0.55～-0.88V比同一环境热氧化制备的SiO2/Si结构平带电压小得多。 |
| 关 键 词： | 氧等离子体 聚硅烷涂层 平带电压 二氧化硅／硅结构 |
| 文章编号： | 1003-353X(2001)01-0057-03 |
| 修稿时间： | 1999年12月27日 |
Influence of treatments on the flat-band voltage of SiO2/Si |
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| XIANG Shao-hua,XIE Mao-nong,ZHANG Ming-gao,LIAO Wei,PENG Zhi-jian,FU He-jian.Influence of treatments on the flat-band voltage of SiO2/Si[J].Semiconductor Technology,2001,26(1):57-59. | |
| Authors: | XIANG Shao-hua XIE Mao-nong ZHANG Ming-gao LIAO Wei PENG Zhi-jian FU He-jian |
| Abstract: | The SiO2/Si structure was formed when ploysilane coating on Si substrate was treated by O2-plasma method. The flat-band voltage was measured by the conventional MOS capacitance method. The results showed that the flat-band voltage was dependent on the conditions of O2-plasma such as reactant pressure, treatment time and radio-frequency power. When an optimal treatment condition was selected, it was up to a minimal value in the range of --0.55~-0.88V, which was less than that of SiO2/Si structure by thermal oxidation under the same experimental environment. |
| Keywords: | O2-plasma polysilane coating flat-band volt |
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