| 一种BiCMOS过热保护电路 |
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| 引用本文： | 刘振丰,冯全源. 一种BiCMOS过热保护电路[J]. 微电子学, 2005, 35(6): 655-657,611 |
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| 作者姓名： | 刘振丰 冯全源 |
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| 作者单位： | 西南交通大学,微电子研究所,四川,成都,610031 |
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| 基金项目： | 国家自然科学基金资助项目（60371017）;四川省学术和技术带头人资助项目 |
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| 摘 要： | 提出了一种集成于电源管理芯片内部的过热保护电路。采用0．6μm BiCMOS工艺参数，对电路进行模拟仿真，并与先前提出的过热保护电路进行比较。结果表明，该电路具有关断和开启阈值点的准确性强、对温度灵敏度高、超低静态电流和低功耗等特点。
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| 关 键 词： | 过热保护 BiCMOS 电源管理 |
| 文章编号： | 1004-3365（2005）06-0655-03 |
| 收稿时间： | 2005-03-18 |
| 修稿时间： | 2005-03-182005-08-08 |
A BiCMOS Thermal-Shutdown Protection Circuit |
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| LIU Zhen-feng,FENG Quan-yuan. A BiCMOS Thermal-Shutdown Protection Circuit[J]. Microelectronics, 2005, 35(6): 655-657,611 |
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| Authors: | LIU Zhen-feng FENG Quan-yuan |
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| Affiliation: | Institute of Microelectronics , Southwest J iaotong University, Chengdu , Sichuan 610031, P. R. China |
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| Abstract: | A new thermal-shutdown protection circuit is presented. The circuit is simulated with 0.6 ptm BiCMOS technology, And a comparison is made with previous thermal-shutdown protection circuits. It has been demonstrated that the circuit features accurate turning off/on threshold value, high sensitivity to temperatures, ultralow static current, and low power consumption. |
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| Keywords: | Thermal-shutdown BiCMOS Power management |
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