Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
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Authors: | Mihai Apreutesei Régis Debord Mohamed Bouras Philippe Regreny Claude Botella Aziz Benamrouche |
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Affiliation: | 1. Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270, Ecully, France;2. Institut Lumière Matière (ILM) - CNRS UMR 5306, Villeurbanne, France |
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Abstract: | AbstractHigh-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10?4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. |
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Keywords: | Functional oxides Thermoelectricity Molecular beam epitaxy La-doped SrTiO3 Integrated films |
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