ICP刻蚀GaP表面形貌控制

不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子（ICP）刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中.

GaP Surface Profile Control Through ICP Etching

Etching anisotropy of GaP relies on the etching parameters and the shape of the mask, yet it is very difficult to obtain the repeatable mask shape. In this paper a method to control the surface profile by changing the parameters of inductively coupled plasma (ICP) machine itself rather than depending on the indefinite mask shape was studied. It is concluded that cathode RF-power and chamber pressure are the two main parameters in the surface profile control. The smaller the RF-power is, the bigger the etching angle obtained;the higher the chamber pressure is, the bigger the etching angle achieved. BCl3 plasma chemistry is generally used to etch GaP compound semiconductors in a planar ICP reactor, into which the Ar plasma chemistry was added in this study to allow the plasma to maintain high ion density conditions over a broader range of operating pressure.