Growth and optical properties of gallium nitride nanowires produced via different routes |
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Authors: | Han-Kyu Seong Hannah Jeong Ryong Ha Jung-Chul Lee Yun-Mo Sung Heon-Jin Choi |
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Affiliation: | (1) Department of Materials Science and Engineering, Yonsei University, 134, Sinchon-dong, Seodaemun-gu, 120-749 Seoul, Korea;(2) Department of Materials Science and Engineering, Korea University, 1, Anam-dong 5-ga, Seongbuk-gu, 136-713 Seoul, Korea |
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Abstract: | Several vapor phase processes for the preparation of GaN nanowires, such as chemical vapor deposition (CVD), direct reaction
(DR), and hydride vapor phase epitaxial growth (HVPE), have been previously reported. To determine the most appropriate route
for fabrication and engineering of GaN nanowires, we prepared nanowires via the three aforementioned routes and characterized
their microstructures and photoluminescence (PL) properties. All prepared nanowires were single-crystalline, whowing well-defined
crystal structure in X-ray diffraction and transmission electron microscopic analyses. However, high-quality nanowires could
most readily be obtained by DR. Large-scale and selective area growth of nanowires could most readily be achieved by CVD and
HVPE. PL spectra for the nanowires prepared by HVPE showed a red-shifted center wavelength and wider full width-half maximum
(FWHM) value as compared to those prepared by DR or CVD. This indicates the presence of unknown impurities and/or defects
in the nanowires prepared by HVPE. Our results indicate that high-quality nanowires can be prepared by DR and CVD, while large-scale
selective growth can be achieved by CVD and HVPE. |
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Keywords: | synthetic route semiconducting III– V materials GaN nanowires |
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