GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy |
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| Authors: | A. Yu. Egorov A. E. Zhukov A. R. Kovsh V. M. Ustinov V. V. Mamutin S. V. Ivanov V. N. Zhmerik A. F. Tsatsul’nikov D. A. Bedarev P. S. Kop’ev |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg |
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| Abstract: | Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells. Pis’ma Zh. Tekh. Fiz. 24, 81–87 (December 12, 1998) |
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