| 一种提高微波功率晶体管高频增益的新方法 |
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| 引用本文： | 郭本青,张庆中. 一种提高微波功率晶体管高频增益的新方法[J]. 电子质量, 2004, 0(9): 76-78 |
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| 作者姓名： | 郭本青 张庆中 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054 |
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| 摘 要： | 利用旁路电容来补偿为了获得器件高可靠性,而引入的大整流电阻所导致的高频增益低落问题.在大于共发射极截至频率fβ的较宽频带内表现出明显的效果.最终使器件具备更高的可靠性,更优的增益特性.
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| 关 键 词： | 微波功率晶体管 可靠性 高频增益 S参量 |
| 文章编号： | 1003-0107(2004)09-0076-03 |
A New Way Improving High-Frequency Gain of MW Power Transistor |
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| Guo Ben-qing,Zhang Qing-zong. A New Way Improving High-Frequency Gain of MW Power Transistor[J]. Electronics Quality, 2004, 0(9): 76-78 |
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| Authors: | Guo Ben-qing Zhang Qing-zong |
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| Abstract: | In order to obtain high reliability of the devices, people often use a big ballast resistor, which inevitably leads to the turndown of High frequency gain. But we use a shunt capacitor to compensate for it. Therefore, in a wider frequency band being bigger than common emitter cut-off frequency transistor behaviors an obvious effect. Ultimately it makes the device behavior both much higher reliability and better gain performance. |
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| Keywords: | Microwave power transistor Reliability High frequency gain S parameter |
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