确定VCSEL电势及载流子自洽分布算法的研究

分别使用准Fermi能级和pn结模型决定VCSEL的有源层压降,建立了两种自洽确定VCSEL中电势及载流子分布的方法.针对电极电压变化和氧化层限制孔径变化的两种情况,在阈值附近对器件中的结电压分布、载流子浓度分布和注入有源层电流密度分布进行了计算;针对两者所得结果的差异进行了简要的分析,指出了二者的特点及适用范围.

Calculation Method of Self-Consistent Distribution of Voltage and Carrier Density in VCSEL

Two different methods are introduced,which are quasi-Fermi level and pn junction model employed to determine the voltage of active layer in VCSEL.For two situations,which are anode voltage ascertained and confinement aperture varying and confinement aperture ascertained and anode voltage varying,the distribution of voltage in the resistive region,distribution of injected current and carrier density in the active layer and the voltage drop at laser's active region are calculated by using these two methods.Results manifest that the voltage distribution above active layer merely has no effect on the distribution of carrier density in the active layer,meanwhile the characteristics and applicable condition of these two methods are outlined.It can be concluded that pn junction model is a reasonable and appropriate approximate method for the simulation.