Monolithic integration of GaAs photoconductors with a field-effect transistor |
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| Authors: | Lam D.K.W. Syrett B.A. Stubbs M.G. |
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| Affiliation: | Communication Research Centre, Department of Communications, Ottawa, Canada; |
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| Abstract: | A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ~3 dB in the FET is also achieved. |
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