| 基于功率MOS线性高压放大器设计 |
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| 引用本文： | 张浩,王立新,陆江,刘肃.基于功率MOS线性高压放大器设计[J].现代电子技术,2010,33(2):10-11,14. |
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| 作者姓名： | 张浩 王立新 陆江 刘肃 |
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| 作者单位： | 1. 中国科学院,微电子研究所,北京,100029
2. 兰州大学,物理科学与技术学院,甘肃,兰州,730000 |
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| 摘 要： | 为了实现时输出高压的线性控制，基于功率MOSFET的电学特性，运用NMOS功率管设计一种新结构的高压运算放大器，通过模拟仿真和实验测量结果表明，当输入电压为0～5V时，电路可实现0～50V的线性输出，并且通过加入PMOS功率管进一步改进电路，可得到正负高压的输出，模拟仿真为-140～＋140V，这表明所设计的电路线性度高，可以满足高压运放的要求，且制作成本低，对现代通信中的大功率驱动具有重要意义。
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| 关 键 词： | 功率MOSFET 线性高压 运算放大器 功率驱动 |
Design of Linear High Voltage Amplifier Based on Power MOSFET |
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| ZHANG Hao,WANG Lixin,LU Jiang,LIU Su.Design of Linear High Voltage Amplifier Based on Power MOSFET[J].Modern Electronic Technique,2010,33(2):10-11,14. |
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| Authors: | ZHANG Hao WANG Lixin LU Jiang LIU Su |
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| Affiliation: | ZHANG Hao1,WANG Lixin1,LU Jiang1,LIU Su2 (1.The Institute of Microelectronics,Chinese Academiy of Sciences,Beijing,100029,China,2.School of Physical Science , Technology,Lanzhou University,Lanzhou,730000,China) |
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| Abstract: | In order to achieve the linear control of high- voltage output in operational amplifier,based on the electrical properties of power MOSFET, a high - voltage operational amplifier is designed with new structure with power NMOS. Through simulation and experimental results, the linear output voltage is 0 ~ 50 V can be achieved,when the range of the input voltage is 0~5 V. And with the further improvement by utilizing power PMOS,the output voltage is --140-＋-140 V can be acquired, which indicates the high linearity, and with low cost, the needs of high voltage operational amplifier can be met. There is significance in the high power driving of modern communication. |
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| Keywords: | power MOSFET linear high voltage operational amplifier power drive |
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