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Measurement of the current transient in Ta2O5 films |
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| Authors: | K Sundaram WK Choi CH Ling |
| Affiliation: | Microelectronics Laboratory, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511, Singapore |
| Abstract: | Current vs. time (I?t) measurements were performed on Ta2O5-based devices. Charge build-up at the Ta2O5/SiO2 interface was used to explain the transient. The interfacial charge density was calculated from the I?t curve and the maximum was found to be 398 nC cm-2 and 317 nC cm-2 for Al/Ta2O5/Si and Al/Ta2O5/SiO2/Si capacitors respectively. The value for MTOS was comparable with the value obtained by quasi-static measurements. |
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