深槽介质工艺制作高密度电容技术

随着系统向高速度、低功耗、低电压和多媒体、网络化、移动化的发展,系统对电路的要求越来越高,在需求牵引和技术推动的双重作用下,出现了将整个系统集成在一个微电子芯片上的系统芯片(System On A Chip,SOC)概念。采用SOC的设计方式可以使芯片面积向小尺寸、高集成度方向发展。SOC设计的系统芯片能够得以实现是以不断发展的芯片制造技术为依托的。文章介绍了基于深槽介质工艺制作高密度电容的技术,通过深槽工艺技术实现大的存储电容。该电容制作采用深槽刻蚀、ONO介质、原位掺杂多晶(ISDP)填充等工艺技术,可以增加电容密度达20倍,提高了电路集成度,其性能优良、漏电极低。

The Technology based on Deep Trench Dielectric Process for The High Density Capacitance

With the system to high-speed,low power,low voltage and multi-media,networking,mobile-oriented development,and systems have become increasingly demanding to circuit,the traditional integrated circuit design technology has been unable to meet the increasing performance of the whole system requirements.It is under the dual push of demand traction and technology-driven,the concept that integrating the whole system into a microelectronic chip SOC(System on a Chip,SOC)comes.The use of SOC design allows the chip ...