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Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca‐Doped BiFeO3
Authors:Jan Seidel  Morgan Trassin  Yi Zhang  Peter Maksymovych  Tino Uhlig  Peter Milde  Denny Köhler  Arthur P. Baddorf  Sergei V. Kalinin  Lukas M. Eng  Xiaoqing Pan  Ramamoorthy Ramesh
Affiliation:1. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, Australia;2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA;3. Department of Physics, University of California, Berkeley, Berkeley, CA, USA;4. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA;5. Department of Materials, ETH Zurich, Zurich, Switzerland;6. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA;7. Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, USA;8. Institute of Applied Photophysics, Technische Universit?t Dresden, Dresden, Germany
Abstract:
Keywords:complex oxides  interfaces  phase boundaries  electronic properties  nanotechnology
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