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Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014) |
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| Authors: | Lifeng Wang Bin Wu Jisi Chen Hongtao Liu Pingan Hu Yunqi Liu |
| Affiliation: | 1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, P. R. China;2. Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Harbin, P. R. China |
| Abstract: | |
| Keywords: | hexagonal boron nitride graphene interfaces chemical vapor deposition electronic devices |