首页 | 本学科首页   官方微博 | 高级检索  
     


Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells
Authors:Yun Seog Lee  Danny Chua  Riley E Brandt  Sin Cheng Siah  Jian V Li  Jonathan P Mailoa  Sang Woon Lee  Roy G Gordon  Tonio Buonassisi
Affiliation:1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA;2. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, USA;3. National Renewable Energy Laboratory, Golden, Colorado, USA
Abstract:
Keywords:solar cells  photovoltaic devices  thin films  charge transport  electro‐optical materials
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号