| 具有非磁性中间层的RE-TM双层垂直磁化膜耦合研究 |
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| 引用本文： | 王浩敏,林更琪,廖红伟,彭烈涛,李震,王可.具有非磁性中间层的RE-TM双层垂直磁化膜耦合研究[J].信息记录材料,2002,3(2):10-12,21. |
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| 作者姓名： | 王浩敏 林更琪 廖红伟 彭烈涛 李震 王可 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北武汉,430074 |
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| 摘 要： | 研究了光调制直接重写磁光记录介质中存储层（TbFeCo）和写入层（DyFeCo）中加入TiN非磁性层后的耦合性能。当 TiN层为 3～21A,存储层和写入层层间交换耦合能密度为 0.2～0.3 erg/cm2,如果能精确控制 TiN的厚度,就可以控制层间耦合能,从而改善MO薄膜的读写特性。
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| 关 键 词： | 交换耦合 非磁性中间层 磁光薄膜 |
| 文章编号： | 1009-5624(2002)02-0010-04 |
Exchange Coupling Mechanism of RE TE Bilayers MO Films Using The Non magnetic Intermediate Layer |
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| Wang Haomin,Lin Gengqi,Liao Hongwei,Peng Lietao,Li Zhen,Wang Ke.Exchange Coupling Mechanism of RE TE Bilayers MO Films Using The Non magnetic Intermediate Layer[J].Information Recording Materials,2002,3(2):10-12,21. |
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| Authors: | Wang Haomin Lin Gengqi Liao Hongwei Peng Lietao Li Zhen Wang Ke |
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| Abstract: | The exchange coupling study of which a non-magnetic intermediate TiN layer was interposed between the memory layers (TbFeCo) and the writing layers (DyFeCo). The exchange coupling energy is about 0. 2 - 0. 3erg/cm2 when the thickness of the intermediate TiN is in 3 -2lA. In tri-layered structure TbFeCo/TiN/DyFeCo, coupling energy can be lowered effectively when the thickness of intermediate TiN layer is in 3 - 21 A. The property can be favorable to writing and erasing of the MO films. |
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| Keywords: | exchange couple nonmagnetic intermediate layer MO film |
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