| Ni颗粒对SnBi焊点电迁移的抑制作用 |
| |
| 引用本文： | 徐广臣,何洪文,聂京凯,郭福.Ni颗粒对SnBi焊点电迁移的抑制作用[J].电子元件与材料,2008,27(11). |
| |
| 作者姓名： | 徐广臣 何洪文 聂京凯 郭福 |
| |
| 作者单位： | 北京工业大学,材料科学与工程学院,北京,100024 |
| |
| 摘 要： | 为抑制芯片中微小焊点的电迁移,向共晶SnBi钎料中添加微米级Ni颗粒,并在φ0.5mm铜线接头上形成焊点。结果表明:当电流密度为104A/cm2、通电96h后,阳极附近没有出现富Bi层,即电迁移现象得到抑制。这是由于Ni颗粒与Sn形成了IMC,阻挡了Bi沿Sn基体扩散的快速通道,防止了两相分离,提高了焊点可靠性。
|
| 关 键 词： | 电子技术 电迁移 无铅复合钎料 SnBi Ni颗粒 |
Electromigration suppressing effect of Ni particle on SnBi soldering point |
| |
| XU Guang-chen,HE Hong-wen,NIE Jing-kai,GUO Fu.Electromigration suppressing effect of Ni particle on SnBi soldering point[J].Electronic Components & Materials,2008,27(11). |
| |
| Authors: | XU Guang-chen HE Hong-wen NIE Jing-kai GUO Fu |
| |
| Affiliation: | XU Guang-chen,HE Hong-wen,NIE Jing-kai,GUO Fu (School of Materials Science & Engineering,Beijing University of Technology,Beijing 100024,China) |
| |
| Abstract: | For suppressing electromigration of little soldering points in chips, micro sized Ni particle Bi-enrichment was added to eutectic SnBi solder, and forming soldering point at φ 0.5 mm Cu filament ends. Results show that there is no Bi enrichment ply in the anode, e.g. electromigration is suppressed when current density is 104 A/cm2 after 96 h, because of IMC (Ni and Sn) blocks the fast diffusion paths of Bi along Sn-base, separation of two phases is retarded and the reliability of soldering points increases. |
| |
| Keywords: | SnBi |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
